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CLX27 HiRel X-Band GaAs Power-MESFET * * * * * * *
HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 15 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 55 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/007, Type Variant No.s 04 to 06
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration 1 2 S 3 D
Package
CLX27-00 (ql) CLX27-05 (ql) CLX27-10 (ql)
-
see below
G
MWP-25
CLX27-nn: specifies output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62702L119 on request on request Q62702L118
(see order instructions for ordering example)
Semiconductor Group
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Draft D, September 99
CLX27
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1
Symbol VDS VDG VGS ID IG PC
Values 11 13 -6 420 5 1.5 at VDS 8 V 2.5 at VDS 7 V 3.5 at VDS 6 V
Unit V V V mA mA dB
Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) Soldering temperature Thermal Resistance Junction-soldering point Notes.:
5)
PC PC TJ Tstg Ptot Tsol
3.5 at VDS 6 V tbd. 175 - 65...+ 175 3.38 230
dB dB C C W C
Rth JS
40
K/W
1) Operation Range 1: 80 mA ID 160 mA 2) Operation Range 2: ID > 160 mA 3) Operation Range 3: ID < 80 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
Semiconductor Group
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Draft D, September 99
CLX27
Electrical Characteristics (at TA=25C; unless otherwise specified)
Parameter
Symbol min.
Values typ. max.
Unit
DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 12 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 120 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 120 mA, Ts = +25C Rth JS 35 K/W gm 130 160 mS -IGp9.5 240 A IDp9.5 600 A -IGp3 24 A IDp3 60 A -VGth 1.2 2.2 3.2 V IDss 180 300 420 mA
Semiconductor Group
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Draft D, September 99
CLX27
Electrical Characteristics (continued)
Parameter
Symbol min.
Values typ. max.
Unit
AC Characteristics Linear power gain 1) VDS = 8 V, ID = 120 mA, f = 2.3 GHz, Pin = 0 dBm CLX27-00 CLX27-05 CLX27-10 Power output at 1dB gain compr. 1) VDS = 8 V, ID(RF off) = 120 mA, f = 2.3 GHz CLX27-00 CLX27-05 CLX27-10 Output Power 1) VDS = 8 V, ID(RF off) = 120 mA, f = 2.3 GHz, Pin = 10.5 dBm CLX27-00 CLX27-05 CLX27-10 Power added efficiency 1), 2) VDS = 8 V, ID(RF off) = 120 mA, f = 2.3 GHz, Pin = 10.5 dBm CLX27-00 CLX27-05 CLX27-10 Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC 45 48 50 50 53 55 PAE 26.0 27.0 27.5 26.5 27.3 27.8 % Pout 26.5 27.3 27.8 dBm P1dB 17.5 18.0 18.0 18.5 19.0 19.0 dBm Glp dB
Semiconductor Group
4 of 9
Draft D, September 99
CLX27
Typical Common Source S-Parameters
= 50 |S22| [magn] 0,136 0,141 0,148 0,156 0,165 0,177 0,185 0,195 0,204 0,213 0,224 0,232 0,240 0,248 0,256 0,264 0,271 0,278 0,283 0,289 0,293 0,296 0,300 0,301 0,306 0,310 0,314 0,319 0,323 0,326 0,329 0,344 0,360 0,374 0,387 0,402 0,415 0,428 0,440 0,452 0,464 0,473 0,488 0,501 0,512 0,524 0,534 0,539 0,541 0,541 0,538 0,526 0,510 0,489 0,466 0,442 0,415 0,402 0,400 0,408
f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0
|S11| [magn] 0,945 0,928 0,911 0,898 0,886 0,875 0,867 0,861 0,855 0,849 0,844 0,839 0,834 0,830 0,826 0,822 0,819 0,815 0,812 0,810 0,807 0,806 0,804 0,803 0,802 0,800 0,799 0,799 0,797 0,796 0,795 0,794 0,793 0,793 0,792 0,791 0,791 0,790 0,789 0,788 0,788 0,787 0,786 0,784 0,780 0,776 0,770 0,757 0,739 0,715 0,690 0,666 0,641 0,619 0,599 0,585 0,583 0,592 0,613 0,636
|S21| [magn] 8,649 8,466 8,254 8,022 7,777 7,531 7,281 7,028 6,776 6,533 6,298 6,067 5,842 5,628 5,421 5,221 5,027 4,843 4,669 4,506 4,354 4,212 4,076 3,948 3,830 3,717 3,611 3,509 3,410 3,315 3,227 2,883 2,574 2,320 2,123 1,950 1,805 1,686 1,584 1,493 1,394 1,340 1,275 1,217 1,166 1,121 1,083 1,052 1,030 1,012 0,995 0,982 0,971 0,970 0,960 0,955 0,952 0,945 0,950 0,966
V DS = 3 V, I D = 120 mA, Z o |S12| k-Fact. [magn] 0,22 0,27 0,32 0,35 0,37 0,39 0,40 0,41 0,42 0,43 0,44 0,45 0,47 0,48 0,50 0,52 0,54 0,56 0,58 0,60 0,63 0,64 0,67 0,69 0,71 0,73 0,75 0,77 0,79 0,84 0,85 0,93 1,01 1,11 1,21 1,30 1,36 1,41 1,44 1,47 1,50 1,51 1,50 1,48 1,47 1,43 1,39 1,38 1,37 1,39 1,40 1,40 1,40 1,37 1,35 1,31 1,25 1,19 1,07 0,98
S 21 /S 12 [dB] 25,1 24,8 24,4 23,9 23,4 23,0 22,5 22,2 21,8 21,5 21,2 20,9 20,6 20,4 20,2 19,9 19,8 19,6 19,3 19,2 19,0 18,8 18,7 18,5 18,4 18,2 18,1 18,0 17,8 17,8 17,6 17,1 16,6 16,1 15,7 15,3 14,9 14,5 14,1 13,6 13,1 12,8 12,4 12,0 11,5 11,1 10,7 10,2 9,8 9,4 9,0 8,5 8,0 7,5 7,0 6,5 6,0 5,5 5,1 4,7
MAG [dB]
15,8 14,1 12,9 12,0 11,3 10,7 10,1 9,6 9,0 8,6 8,2 7,9 7,5 7,2 7,0 6,6 6,2 5,7 5,3 4,7 4,2 3,9 3,5 3,2 3,0 2,9 3,4
Semiconductor Group
5 of 9
Draft D, September 99
CLX27
Typical Common Source S-Parameters (continued)
= 50 |S22| [mag] 0,257 0,254 0,249 0,243 0,238 0,233 0,228 0,224 0,220 0,218 0,216 0,215 0,215 0,215 0,216 0,217 0,217 0,219 0,221 0,223 0,226 0,228 0,231 0,234 0,239 0,242 0,245 0,249 0,253 0,258 0,263 0,286 0,309 0,333 0,357 0,381 0,404 0,424 0,444 0,463 0,481 0,500 0,517 0,536 0,557 0,577 0,594 0,607 0,618 0,623 0,625 0,621 0,612 0,598 0,581 0,561 0,539 0,526 0,526 0,537
f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0
|S11| [mag] 0,946 0,931 0,914 0,898 0,887 0,879 0,872 0,865 0,859 0,854 0,849 0,844 0,839 0,835 0,831 0,826 0,823 0,820 0,817 0,814 0,812 0,811 0,809 0,808 0,807 0,805 0,804 0,804 0,803 0,803 0,802 0,801 0,800 0,799 0,798 0,798 0,797 0,796 0,796 0,795 0,794 0,793 0,793 0,793 0,792 0,792 0,790 0,778 0,761 0,738 0,714 0,695 0,666 0,641 0,620 0,604 0,604 0,620 0,643 0,667
|S21| [mag] 9,316 9,124 8,903 8,660 8,404 8,150 7,888 7,628 7,367 7,110 6,862 6,615 6,374 6,144 5,922 5,708 5,501 5,304 5,120 4,944 4,783 4,628 4,480 4,336 4,206 4,079 3,958 3,845 3,737 3,632 3,537 3,120 2,776 2,494 2,258 2,068 1,907 1,772 1,656 1,554 1,463 1,381 1,308 1,241 1,182 1,127 1,080 1,041 1,005 0,981 0,957 0,941 0,929 0,917 0,908 0,900 0,898 0,900 0,908 0,923
V DS = 5 V, I D = 120 mA, Z o k-Fact. [mag] 0,28 0,33 0,38 0,42 0,43 0,44 0,45 0,45 0,46 0,48 0,49 0,51 0,52 0,55 0,57 0,60 0,63 0,66 0,68 0,71 0,72 0,76 0,79 0,81 0,82 0,85 0,88 0,89 0,92 0,95 0,98 1,09 1,22 1,33 1,44 1,51 1,54 1,56 1,53 1,51 1,49 1,45 1,41 1,35 1,27 1,19 1,11 1,07 1,04 1,03 1,03 1,02 1,02 1,02 1,01 0,99 0,93 0,89 0,80 0,72
S 21 /S 12 [dB] 26,6 26,2 25,8 25,4 24,9 24,4 24,0 23,6 23,2 22,9 22,7 22,4 22,1 21,9 21,7 21,5 21,3 21,2 21,0 20,8 20,6 20,5 20,3 20,2 20,0 19,9 19,7 19,5 19,4 19,3 19,2 18,7 18,2 17,7 17,2 16,7 16,2 15,6 15,0 14,5 13,9 13,4 12,8 12,3 11,8 11,3 10,8 10,2 9,7 9,1 8,6 8,1 7,6 7,0 6,5 5,9 5,3 4,9 4,5 4,2
MAG [dB]
16,8 15,4 14,2 13,3 12,5 11,8 11,2 10,7 10,3 9,8 9,4 9,0 8,8 8,6 8,6 8,7 8,6 8,4 8,1 7,6 7,3 6,7 6,1 5,9
Semiconductor Group
6 of 9
Draft D, September 99
CLX27
Typical Common Source S-Parameters (continued)
= 50 |S22| [mag] 0,404 0,398 0,390 0,381 0,373 0,365 0,357 0,350 0,343 0,338 0,333 0,328 0,324 0,320 0,318 0,317 0,315 0,314 0,312 0,311 0,311 0,311 0,313 0,315 0,317 0,319 0,321 0,325 0,327 0,330 0,334 0,353 0,378 0,403 0,428 0,450 0,474 0,498 0,519 0,538 0,556 0,574 0,595 0,614 0,635 0,656 0,674 0,688 0,698 0,706 0,709 0,711 0,708 0,699 0,688 0,673 0,657 0,648 0,652 0,667
f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0
|S11| [mag] 0,950 0,932 0,915 0,902 0,891 0,881 0,874 0,868 0,862 0,857 0,852 0,848 0,843 0,839 0,836 0,832 0,829 0,827 0,825 0,823 0,821 0,820 0,819 0,818 0,817 0,815 0,815 0,814 0,813 0,813 0,812 0,812 0,812 0,812 0,812 0,811 0,811 0,811 0,811 0,811 0,810 0,810 0,809 0,809 0,808 0,806 0,802 0,793 0,778 0,756 0,735 0,713 0,691 0,665 0,639 0,622 0,622 0,642 0,668 0,694
|S21| [mag] 9,344 9,149 8,924 8,677 8,420 8,166 7,908 7,648 7,387 7,132 6,882 6,632 6,389 6,155 5,928 5,711 5,505 5,309 5,125 4,953 4,792 4,634 4,486 4,342 4,206 4,076 3,956 3,841 3,731 3,629 3,534 3,110 2,748 2,463 2,223 2,025 1,860 1,721 1,601 1,496 1,402 1,317 1,240 1,171 1,109 1,052 1,002 0,959 0,926 0,891 0,863 0,842 0,825 0,810 0,800 0,793 0,787 0,787 0,794 0,808
V DS = 8 V, I D = 120 mA, Z o k-Fact. [mag] 0,33 0,39 0,44 0,46 0,49 0,51 0,52 0,53 0,54 0,56 0,58 0,60 0,62 0,65 0,67 0,70 0,73 0,76 0,79 0,81 0,85 0,88 0,90 0,94 0,97 1,00 1,03 1,06 1,10 1,12 1,15 1,29 1,42 1,53 1,58 1,58 1,53 1,49 1,40 1,32 1,25 1,17 1,10 1,02 0,94 0,86 0,79 0,75 0,72 0,71 0,72 0,71 0,70 0,71 0,73 0,73 0,71 0,65 0,58 0,51
S 21 /S 12 [dB] 28,4 27,7 27,1 26,4 26,0 25,6 25,2 24,8 24,5 24,2 23,9 23,7 23,4 23,2 22,9 22,7 22,6 22,4 22,2 22,0 21,8 21,7 21,5 21,4 21,3 21,1 21,0 20,9 20,7 20,6 20,5 20,0 19,4 18,8 18,2 17,5 16,7 16,0 15,3 14,5 13,8 13,2 12,5 11,9 11,3 10,7 10,1 9,5 9,0 8,4 7,9 7,3 6,7 6,1 5,6 5,1 4,5 4,0 3,5 3,2
MAG [dB]
20,9 19,9 19,3 18,8 18,5 18,1 16,7 15,5 14,5 13,7 13,0 12,4 11,9 11,5 11,1 10,8 10,6 10,6 10,9
Semiconductor Group
7 of 9
Draft D, September 99
CLX27
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only.
Ordering Form: Ordering Code: Q.......... CLX27- (nn) (ql) (nn): Output Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62702L118 CLX27-10 ES For CLX27; Output Power Level 10 (Pout>27.5 dBm) in ESA Space Quality Level
Further Informations:
See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.de/semiconductor/products/35/35.htm
- HiRel Discrete and Microwave Semiconductors www.infineon.de/semiconductor/products/35/353.htm
Please contact also our marketing division : Tel.: Fax.: Address: ++89 234 24480 ++89 234 24838 e-mail: martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich
Semiconductor Group
8 of 9
Draft D, September 99
CLX27
MWP-25 Package
Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies.
1 2 3
The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).
Semiconductor Group
9 of 9
Draft D, September 99

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